<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Ponomarev, M. V.</style></author><author><style face="normal" font="default" size="100%">Sharma, K.</style></author><author><style face="normal" font="default" size="100%">Verheijen, M. A.</style></author><author><style face="normal" font="default" size="100%">van de Sanden, M. C. M.</style></author><author><style face="normal" font="default" size="100%">Creatore, M.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Improved conductivity of aluminum-doped ZnO: The effect of hydrogen diffusion from a hydrogenated amorphous silicon capping layer</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of Applied Physics</style></secondary-title><alt-title><style face="normal" font="default" size="100%">J. Appl. Phys.</style></alt-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">AL FILMS</style></keyword><keyword><style  face="normal" font="default" size="100%">DEPOSITION</style></keyword><keyword><style  face="normal" font="default" size="100%">ELECTRICAL-PROPERTIES</style></keyword><keyword><style  face="normal" font="default" size="100%">GLASS</style></keyword><keyword><style  face="normal" font="default" size="100%">PLASMA</style></keyword><keyword><style  face="normal" font="default" size="100%">POLYCRYSTALLINE SILICON</style></keyword><keyword><style  face="normal" font="default" size="100%">SOLAR-CELL APPLICATIONS</style></keyword><keyword><style  face="normal" font="default" size="100%">ZINC-OXIDE</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2012</style></year><pub-dates><date><style  face="normal" font="default" size="100%">Mar</style></date></pub-dates></dates><urls><web-urls><url><style face="normal" font="default" size="100%">&lt;Go to ISI&gt;://WOS:000302221700062 </style></url></web-urls></urls><number><style face="normal" font="default" size="100%">6</style></number><volume><style face="normal" font="default" size="100%">111</style></volume><pages><style face="normal" font="default" size="100%">7</style></pages><isbn><style face="normal" font="default" size="100%">0021-8979</style></isbn><language><style face="normal" font="default" size="100%">English</style></language><abstract><style face="normal" font="default" size="100%">Plasma-deposited aluminum-doped ZnO (ZnO:Al) demonstrated a resistivity gradient as function of the film thickness, extending up to about 600 nm. This gradient decreased sharply when the ZnO:Al was capped by a hydrogenated amorphous silicon layer (a-Si:H) and subsequently treated according to the solid phase crystallization (SPC) procedure at 600 degrees C. The resistivity reduced from 1.2.10(-1) to 2.6.10(-3) Omega.cm for a film thickness of 130 nm, while for thicker films the decrease in resistivity was less pronounced, i.e., a factor of 2 for a film thickness of 810 nm. While the carrier concentration was not affected, the mobility significantly increased from 7 to 30 cm(2)/V.s for the thick ZnO:Al layers. This increase was ascribed to the passivation of grain boundary defects by hydrogen, which diffused from the a-Si:H toward the ZnO:Al during the SPC procedure. The passivation effect was more pronounced in thinner ZnO:Al layers, characterized by a smaller grain size, due to the presence of large grain boundaries. For thicker films with grain sizes up to 200-300 nm the mobility became progressively less affected by the presence of grain boundaries. Therefore, the hydrogen-induced improvement in conductivity was less significant for the thick ZnO:Al films. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3692439]</style></abstract><work-type><style face="normal" font="default" size="100%">Article</style></work-type><accession-num><style face="normal" font="default" size="100%">WOS:000302221700062</style></accession-num><notes><style face="normal" font="default" size="100%">ISI Document Delivery No.: 918ARTimes Cited: 0Cited Reference Count: 43</style></notes><auth-address><style face="normal" font="default" size="100%">[Ponomarev, M. V.; Sharma, K.; Verheijen, M. A.; van de Sanden, M. C. M.; Creatore, M.] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands. [van de Sanden, M. C. M.] DIFFER, NL-3430 BE Nieuwegein, Netherlands.Ponomarev, MV (reprint author), Eindhoven Univ Technol, Dept Appl Phys, POB 513, NL-5600 MB Eindhoven, Netherlandsm.ponomarev@tue.nl; m.creatore@tue.nl</style></auth-address></record></records></xml>