<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Sharma, K.</style></author><author><style face="normal" font="default" size="100%">Branca, A.</style></author><author><style face="normal" font="default" size="100%">Illiberi, A.</style></author><author><style face="normal" font="default" size="100%">Tichelaar, F. D.</style></author><author><style face="normal" font="default" size="100%">Creatore, M.</style></author><author><style face="normal" font="default" size="100%">van de Sanden, M. C. M.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">On the Effect of the Amorphous Silicon Microstructure on the Grain Size of Solid Phase Crystallized Polycrystalline Silicon</style></title><secondary-title><style face="normal" font="default" size="100%">Advanced Energy Materials</style></secondary-title><alt-title><style face="normal" font="default" size="100%">Adv. Energy Mater.</style></alt-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">CHEMICAL-VAPOR-DEPOSITION</style></keyword><keyword><style  face="normal" font="default" size="100%">EXPANDING THERMAL PLASMA</style></keyword><keyword><style  face="normal" font="default" size="100%">films</style></keyword><keyword><style  face="normal" font="default" size="100%">GLASS</style></keyword><keyword><style  face="normal" font="default" size="100%">GROWTH</style></keyword><keyword><style  face="normal" font="default" size="100%">H</style></keyword><keyword><style  face="normal" font="default" size="100%">NUCLEATION</style></keyword><keyword><style  face="normal" font="default" size="100%">RECRYSTALLIZATION</style></keyword><keyword><style  face="normal" font="default" size="100%">SIO2</style></keyword><keyword><style  face="normal" font="default" size="100%">TEMPERATURE-DEPENDENCE</style></keyword><keyword><style  face="normal" font="default" size="100%">THIN-FILMS</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2011</style></year><pub-dates><date><style  face="normal" font="default" size="100%">May</style></date></pub-dates></dates><urls><web-urls><url><style face="normal" font="default" size="100%">&lt;Go to ISI&gt;://000291728400015 </style></url></web-urls></urls><number><style face="normal" font="default" size="100%">3</style></number><volume><style face="normal" font="default" size="100%">1</style></volume><pages><style face="normal" font="default" size="100%">401-406</style></pages><isbn><style face="normal" font="default" size="100%">1614-6832</style></isbn><language><style face="normal" font="default" size="100%">English</style></language><abstract><style face="normal" font="default" size="100%">In this paper the effect of the microstructure of remote plasma-deposited amorphous silicon films on the grain size development in polycrystalline silicon upon solid-phase crystallization is reported. The hydrogenated amorphous silicon films are deposited at different microstructure parameter values R* (which represents the distribution of SiHx bonds in amorphous silicon), at constant hydrogen content. Amorphous silicon films undergo a phase transformation during solid-phase crystallization and the process results in fully (poly-)crystallized films. An increase in amorphous film structural disorder (i.e., an increase in R*), leads to the development of larger grain sizes (in the range of 700-1100 nm). When the microstructure parameter is reduced, the grain size ranges between 100 and 450 nm. These results point to the microstructure parameter having a key role in controlling the grain size of the polycrystalline silicon films and thus the performance of polycrystalline silicon solar cells.</style></abstract><work-type><style face="normal" font="default" size="100%">Article</style></work-type><accession-num><style face="normal" font="default" size="100%">ISI:000291728400015</style></accession-num><notes><style face="normal" font="default" size="100%">ISI Document Delivery No.: 778THTimes Cited: 0Cited Reference Count: 45</style></notes><auth-address><style face="normal" font="default" size="100%">[Sharma, Kashish; Branca, Annalisa; Illiberi, Andrea; Creatore, Mariadriana; van de Sanden, Mauritius C. M.] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands. [Tichelaar, Frans D.] Delft Univ Technol, Kavli Inst Nanosci, NL-2600 GA Delft, Netherlands.Sharma, K, Eindhoven Univ Technol, Dept Appl Phys, POB 513, NL-5600 MB Eindhoven, Netherlands.k.sharma@tue.nl m.c.m.v.d.sanden@tue.nl</style></auth-address></record></records></xml>