Filters: Auteur is Pavlov, S. G. [Clear All Filters]
Evidence of noncascade intracenter electron relaxation in shallow donor centers in silicon. Physical Review B. 78:7.. 2008.
Laser transitions under resonant optical pumping of donor centres in Si : P. Applied Physics B-Lasers and Optics. 76:613-616.. 2003.
Stimulated terahertz emission due to electronic Raman scattering in silicon. Applied Physics Letters. 94:3.. 2009.
Stimulated terahertz emission from group-V donors in silicon under intracenter photoexcitation. Applied Physics Letters. 80:3512-3514.. 2002.
Stimulated terahertz stokes emission of silicon crystals doped with antimony donors. Physical Review Letters. 96. 2006.
Terahertz gain on shallow donor transitions in silicon. Journal of Applied Physics. 102:093104.. 2007.
Terahertz lasing from silicon by infrared Raman scattering on bismuth centers. Applied Physics Letters. 95:3.. 2009.
Terahertz Raman laser based on silicon doped with phosphorus. Applied Physics Letters. 92:3.. 2008.