Filters: Auteur is Pavlov, S. G. [Clear All Filters]
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2008. Evidence of noncascade intracenter electron relaxation in shallow donor centers in silicon. Physical Review B. 78:7. Abstract
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2010. Inhomogeneous broadening of phosphorus donor lines in the far-infrared spectra of single-crystalline SiGe. Physical Review B. 82:7. Abstract
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2003. Laser transitions under resonant optical pumping of donor centres in Si : P. Applied Physics B-Lasers and Optics. 76:613-616.
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2009. Stimulated terahertz emission due to electronic Raman scattering in silicon. Applied Physics Letters. 94:3. Abstract
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2002. Stimulated terahertz emission from group-V donors in silicon under intracenter photoexcitation. Applied Physics Letters. 80:3512-3514.
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2006. Stimulated terahertz stokes emission of silicon crystals doped with antimony donors. Physical Review Letters. 96
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2007. Terahertz gain on shallow donor transitions in silicon. Journal of Applied Physics. 102:093104.
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2009. Terahertz lasing from silicon by infrared Raman scattering on bismuth centers. Applied Physics Letters. 95:3. Abstract
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2008. Terahertz Raman laser based on silicon doped with phosphorus. Applied Physics Letters. 92:3. Abstract



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