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Pavlov SG, Hubers HW, Haas PM, Hovenier JN, Klaassen TO, Zhukavin RK, Shastin VN, Carder DA, Redlich B.  2008.  Evidence of noncascade intracenter electron relaxation in shallow donor centers in silicon. Physical Review B. 78:7. Abstract
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Lynch SA, Matmon G, Pavlov SG, Litvinenko KL, Redlich B, van der Meer AFG, Abrosimov NV, Hubers HW.  2010.  Inhomogeneous broadening of phosphorus donor lines in the far-infrared spectra of single-crystalline SiGe. Physical Review B. 82:7. Abstract
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Zhukavin RK, Gaponova DM, Muravjov AV, Orlova EE, Shastin VN, Pavlov SG, Hubers HW, Hovenier JN, Klaassen TO, Riemann H et al..  2003.  Laser transitions under resonant optical pumping of donor centres in Si : P. Applied Physics B-Lasers and Optics. 76:613-616.
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Pavlov SG, Bottger U, Hovenier JN, Abrosimov NV, Riemann H, Zhukavin RK, Shastin VN, Redlich B, van der Meer AFG, Hubers HW.  2009.  Stimulated terahertz emission due to electronic Raman scattering in silicon. Applied Physics Letters. 94:3. Abstract
Shastin VN, Zhukavin RK, Orlova EE, Pavlov SG, Rummeli MH, Hubers HW, Hovenier JN, Klaassen TO, Riemann H, Bradley IV et al..  2002.  Stimulated terahertz emission from group-V donors in silicon under intracenter photoexcitation. Applied Physics Letters. 80:3512-3514.
Pavlov SG, Hubers HW, Hovenier JN, Klaassen TO, Carder DA, Phillips PJ, Redlich B, Riemann H, Zhukavin RK, Shastin VN.  2006.  Stimulated terahertz stokes emission of silicon crystals doped with antimony donors. Physical Review Letters. 96
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Zhukavin RK, Shastin VN, Pavlov SG, Hübers H-W, Hovenier JN, Klaassen TO, van der Meer AFG.  2007.  Terahertz gain on shallow donor transitions in silicon. Journal of Applied Physics. 102:093104.
Pavlov SG, Bottger U, Eichholz R, Abrosimov NV, Riemann H, Shastin VN, Redlich B, Hubers HW.  2009.  Terahertz lasing from silicon by infrared Raman scattering on bismuth centers. Applied Physics Letters. 95:3. Abstract
Pavlov SG, Hubers HW, Bottger U, Zhukavin RK, Shastin VN, Hovenier JN, Redlich B, Abrosimov NV, Riemann H.  2008.  Terahertz Raman laser based on silicon doped with phosphorus. Applied Physics Letters. 92:3. Abstract