Filters: Auteur is Verheijen, M. A. [Clear All Filters]
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2011. Controlling the fixed charge and passivation properties of Si(100)/Al(2)O(3) interfaces using ultrathin SiO(2) interlayers synthesized by atomic layer deposition. Journal of Applied Physics. 110:6. Abstract
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2012. Controlling the resistivity gradient in aluminum-doped zinc oxide grown by plasma-enhanced chemical vapor deposition (vol 112, 043708, 2012). Journal of Applied Physics. 112:1.
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2012. Controlling the resistivity gradient in chemical vapor deposition-deposited aluminum-doped zinc oxide. Journal of Applied Physics. 112:7. Abstract
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2012. Improved conductivity of aluminum-doped ZnO: The effect of hydrogen diffusion from a hydrogenated amorphous silicon capping layer. Journal of Applied Physics. 111:7. Abstract
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2012. In situ crystallization kinetics studies of plasma-deposited, hydrogenated amorphous silicon layers. Journal of Applied Physics. 111:6. Abstract
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2011. Plasma-Assisted Deposition of Au/SiO2 Multi-layers as Surface Plasmon Resonance-Based Red-Colored Coatings. Plasmonics. 6:255-260. Abstract
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2012. Real time in situ spectroscopic ellipsometry of the growth and plasmonic properties of au nanoparticles on SiO2. Nano Research. 5:513-520. Abstract
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2012. Solid-phase crystallization of ultra high growth rate amorphous silicon films. Journal of Applied Physics. 111:5. Abstract
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2013. Ultrahigh throughput plasma processing of free standing silicon nanocrystals with lognormal size distribution. Journal of Applied Physics. 113:134306. Abstract



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