| Titel | Solid-phase crystallization of ultra high growth rate amorphous silicon films |
| Publication Type | Journal Article |
| Year of Publication | 2012 |
| Authors | Sharma K, Ponomarev MV, Verheijen MA, Kunz O, Tichelaar FD, van de Sanden MCM, Creatore M |
| Journal | Journal of Applied Physics |
| Volume | 111 |
| Pagination | 5 |
| Date Published | May |
| Type of Article | Article; Proceedings Paper |
| ISBN Number | 0021-8979 |
| Accession Number | WOS:000305363700046 |
| Trefwoorden | CHEMICAL-VAPOR-DEPOSITION, GLASS, GRAIN NUCLEATION, PLASMA, POLYCRYSTALLINE SILICON, RECRYSTALLIZATION, SI-H FILMS, SOLAR-CELLS, TEMPERATURE-DEPENDENCE |
| Abstract | In this paper, we report on the deposition of amorphous silicon (a-Si:H) films at ultra-high growth rate (11-60 nm/s) by means of the expanding thermal plasma technique, followed by solid-phase crystallization (SPC). Large-grain (similar to 1.5 mu m) polycrystalline silicon was obtained after SPC of high growth rate (similar to 25 nm/s) deposited a-Si:H films. The obtained results are discussed by taking into account the impact of the a-Si:H microstructure parameter R* as well as of its morphology, on the final grain size development. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4717951] |
| URL | http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=Test&SrcApp=TestApp&DestLinkType=FullRecord&KeyUT=WOS:000305363700046&DestApp=WOS |
| Alternate Journal | J. Appl. Phys. |
