In-situ study of the diffusion-reaction mechanism in Mo/Si multilayered films

TitelIn-situ study of the diffusion-reaction mechanism in Mo/Si multilayered films
Publication TypeJournal Article
Year of Publication2011
AuthorsBruijn S, van de Kruijs RWE, Yakshin AE, Bijkerk F
JournalApplied Surface Science
Volume257
Pagination2707-2711
Date PublishedJan
Type of ArticleArticle
ISBN Number0169-4332
Accession NumberISI:000285963200050
TrefwoordenDIFFRACTION, diffusion, INTERDIFFUSION, INTERFACE, molybdenum, MoSi2, multilayers, OPTICS, RATES, silicon, STRUCTURAL RELAXATION, thin films, TRANSITION, X-RAY, X-RAY-DIFFRACTION
AbstractWe present a low temperature diffusion study on the formation of intermixing zones between periodic, nanometer thick films consisting of Mo and Si. An in-situ X-ray diffraction method at pm-accuracy was developed, including a model that explains the period change observed by diffusion limited interface growth. Experiments were carried out on Mo/Si multilayered films in the temperature range of 100-275 degrees C, resulting in the determination of diffusion coefficients. Temperature scaling showed Arrhenius-type behavior of the diffusion constant over the entire temperature range, with an activation energy of 0.5 eV. (C) 2010 Elsevier B.V. All rights reserved.
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Alternate JournalAppl. Surf. Sci.